CMPTA42E NPN
CMPTA92E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA42E and
CMPTA92E are Enhanced versions of the CMPTA42
and CMPTA92 complementary surface mount high
voltage transistors.
MARKING CODES: CMPTA42E: C1DE
CMPTA92E: C2DE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURED ENHANCED SPECIFICATIONS:
♦ BVCBO from 300V min to 350V min.
♦ BVCEO from 300V min to 350V min.
♦ hFE from 25 min to 50 min.
SYMBOL
UNITS
VCBO
VCEO
350
V
350
V
VEBO
IC
6.0
V
500
mA
350
mW
PD
TJ, Tstg
-65 to +150
°C
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TYP
SYMBOL
TEST CONDITIONS
ICBO
VCB=200V
250
nA
IEBO
VEB=3.0V
100
nA
BVEBO
IC=100µA
IC=1.0mA
IE=100µA
VBE(SAT)
IC=50mA, IB=5.0mA
IC=20mA, IB=2.0mA
♦ BVCBO
♦ BVCEO
♦ VCE(SAT)
♦ hFE
♦ hFE
♦ hFE
fT
Cob
VCE=10V,
VCE=10V,
MIN
CMPTA42E
CMPTA92E
MAX
UNITS
350
590
500
350
475
450
V
6.0
8.7
9.6
V
125
150
IC=1.0mA
50
110
105
IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1.0MHz
50
110
105
50
110
105
50
75
75
V
350
mV
0.9
V
MHz
6.0
pF
♦ Enhanced specification
R3 (3-February 2010)
CMPTA42E NPN
CMPTA92E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMPTA42E: C1DE
CMPTA92E: C2DE
R3 (3-February 2010)
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PRODUCT SUPPORT
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• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
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